Thin Film Deposition Monitor
In-situ Temperature and Reflectance Measurements for MOCVD, MBE, RTP and High Temperature CVD Applications
- Accurate, emissivity corrected temperature measurement
- Precise "fringe" resolution for thin film deposition monitoring
- 635 nm laser based reflectance for thin film monitoring
- 880 nm IR LED based reflectance for emissivity correction
- High sampling rate (up to 1000 Hz)
- Touch screen interface – no computer required
- Fully integrated system
- Ideal for:
- MOCVD
- MBE
- CVD (non-plasma assisted)
- RTP
- No fiber optic cable needed in glove box
For advanced material deposition or fast thermal ramping processes, such as MOCVD, MBE, RTP, and high temperature CVD. The TRR200 instrument fully integrates two sophisticated metrology functions with our class-leading radiation thermometer system:
- Automatic emissivity corrected temperature measurement, and
- Film growth monitoring via dual wavelength reflectance measurements.
Automatic Emissivity Correction
The TRR200 combines the industry leading PhotriXTM radiation thermometers (offering superior signal-to-noise ratio) with integrated reflectometers.
For specular (smooth) surfaces, the deposition surface's emissivity can be calculated from its reflectance. By constantly measuring this reflectance, the TRR200 instrument can automatically perform the emissivity correction in-situ and calculate the surface's true temperature.
Film Growth Monitoring
One of the most common methods for measuring thin film properties is to use reflectance measurements. The TRR200 seamlessly integrates ultra precise reflectance measurements with class leading, lowest signal-to-noise ratio radiation detectors. It is critical to use both the highest quality measurement systems and shorter wavelengths to offer “superior resolution”, especially for thicker films grown for today’s optoelectronics. The TRR200 incorporates two wavelengths, 635 nm and 880 nm, measured simultaneously. The reflectometer measures the sample with a laser diode at 635 nm for thin film growth monitoring and a light emitting diode (LED) centered at 880 nm for emissivity correction. The thermal radiation is also measured simultaneously at the 880 nm wavelength.
